A Fully Planarized Multilevel Interconnection Technology Using Semi-Selective Tetraethoxysilane-Ozone Chemical Vapor Deposition at Atmospheric Pressure

T.Homma T.Homma; M.Suzuki M.Suzuki; Y.Murao Y.Murao; Tetsuya Homma

A Fully Planarized Multilevel Interconnection Technology Using Semi-Selective Tetraethoxysilane-Ozone Chemical Vapor Deposition at Atmospheric Pressure

T.Homma T.Homma, M.Suzuki M.Suzuki, Y.Murao Y.Murao, Tetsuya Homma

機能制御システム専攻

研究成果: Article › 査読

本文言語	English
ページ（範囲）	3591-3599
ジャーナル	Journal of the Electrochemical Society
巻	140
出版ステータス	Published - 1993 12月 1

引用スタイル

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title = "A Fully Planarized Multilevel Interconnection Technology Using Semi-Selective Tetraethoxysilane-Ozone Chemical Vapor Deposition at Atmospheric Pressure",

author = "T.Homma T.Homma and M.Suzuki M.Suzuki and Y.Murao Y.Murao and Tetsuya Homma",

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