A High Performance Asymmetric LDD MOSFET Using Selective Oxide Deposition

T.Horiuchi T.Horiuchi, T.Homma T.Homma, Y.Murao Y.Murao, K.Okumura K.Okumura, Tetsuya Homma

研究成果: Article › 査読

本文言語	English
ページ（範囲）	88-89
ジャーナル	1992 Symposium on VLSI Technology, Technical Digest
出版ステータス	Published - 1992 6月 2

引用スタイル

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title = "A High Performance Asymmetric LDD MOSFET Using Selective Oxide Deposition",

author = "T.Horiuchi T.Horiuchi and T.Homma T.Homma and Y.Murao Y.Murao and K.Okumura K.Okumura and Tetsuya Homma",

year = "1992",

month = jun,

day = "2",

language = "English",

pages = "88--89",

journal = "1992 Symposium on VLSI Technology, Technical Digest",

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T1 - A High Performance Asymmetric LDD MOSFET Using Selective Oxide Deposition

AU - T.Horiuchi, T.Horiuchi

AU - T.Homma, T.Homma

AU - Y.Murao, Y.Murao

AU - K.Okumura, K.Okumura

AU - Homma, Tetsuya

PY - 1992/6/2

Y1 - 1992/6/2

M3 - Article

SP - 88

EP - 89

JO - 1992 Symposium on VLSI Technology, Technical Digest

JF - 1992 Symposium on VLSI Technology, Technical Digest

ER -