A high reliability copper dual-damascene interconnection with direct-contact via structure

K. Ueno; M. Suzuki; A. Matsumoto; K. Motoyama; T. Tonegawa; N. Ito; K. Arita; Y. Tsuchiya; T. Wake; A. Kubo; K. Sugai; N. Oda; H. Miyamoto; S. Saito

A high reliability copper dual-damascene interconnection with direct-contact via structure

K. Ueno, M. Suzuki, A. Matsumoto, K. Motoyama, T. Tonegawa, N. Ito, K. Arita, Y. Tsuchiya, T. Wake, A. Kubo, K. Sugai, N. Oda, H. Miyamoto, S. Saito

研究成果: Conference article › 査読

18 被引用数 (Scopus)

抄録

Direct-contact via (DCV) structure in which a Cu via-plug is directly contacted to an interconnect is proposed for a high reliability and high performance Cu dual-damascene (DD) interconnection. Distribution of electromigration (EM) lifetime is dramatically reduced to 0.1 by eliminating void formation at the via-bottom. The developed technology improves the lifetime of the early failure by 5 times. It leads to 1.7 times higher clock frequency due to the higher current density.

本文言語	English
ページ（範囲）	265-268
ページ数	4
ジャーナル	Technical Digest - International Electron Devices Meeting
出版ステータス	Published - 2000
イベント	2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States 継続期間: 2000 12月 10 → 2000 12月 13

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
材料化学
電子工学および電気工学

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引用スタイル

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title = "A high reliability copper dual-damascene interconnection with direct-contact via structure",

abstract = "Direct-contact via (DCV) structure in which a Cu via-plug is directly contacted to an interconnect is proposed for a high reliability and high performance Cu dual-damascene (DD) interconnection. Distribution of electromigration (EM) lifetime is dramatically reduced to 0.1 by eliminating void formation at the via-bottom. The developed technology improves the lifetime of the early failure by 5 times. It leads to 1.7 times higher clock frequency due to the higher current density.",

author = "K. Ueno and M. Suzuki and A. Matsumoto and K. Motoyama and T. Tonegawa and N. Ito and K. Arita and Y. Tsuchiya and T. Wake and A. Kubo and K. Sugai and N. Oda and H. Miyamoto and S. Saito",

year = "2000",

language = "English",

pages = "265--268",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2000 IEEE International Electron Devices Meeting ; Conference date: 10-12-2000 Through 13-12-2000",

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TY - JOUR

T1 - A high reliability copper dual-damascene interconnection with direct-contact via structure

AU - Ueno, K.

AU - Suzuki, M.

AU - Matsumoto, A.

AU - Motoyama, K.

AU - Tonegawa, T.

AU - Ito, N.

AU - Arita, K.

AU - Tsuchiya, Y.

AU - Wake, T.

AU - Kubo, A.

AU - Sugai, K.

AU - Oda, N.

AU - Miyamoto, H.

AU - Saito, S.

PY - 2000

Y1 - 2000

N2 - Direct-contact via (DCV) structure in which a Cu via-plug is directly contacted to an interconnect is proposed for a high reliability and high performance Cu dual-damascene (DD) interconnection. Distribution of electromigration (EM) lifetime is dramatically reduced to 0.1 by eliminating void formation at the via-bottom. The developed technology improves the lifetime of the early failure by 5 times. It leads to 1.7 times higher clock frequency due to the higher current density.

AB - Direct-contact via (DCV) structure in which a Cu via-plug is directly contacted to an interconnect is proposed for a high reliability and high performance Cu dual-damascene (DD) interconnection. Distribution of electromigration (EM) lifetime is dramatically reduced to 0.1 by eliminating void formation at the via-bottom. The developed technology improves the lifetime of the early failure by 5 times. It leads to 1.7 times higher clock frequency due to the higher current density.

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UR - http://www.scopus.com/inward/citedby.url?scp=0034453398&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0034453398

SN - 0163-1918

SP - 265

EP - 268

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 2000 IEEE International Electron Devices Meeting

Y2 - 10 December 2000 through 13 December 2000

ER -

A high reliability copper dual-damascene interconnection with direct-contact via structure

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ASJC Scopus subject areas

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