A High-Speed Frequency Divider Using n+ -Ge Gate AlGaAs/GaAs MISFET's

Shuichi Fujita; Makoto Hirano; Koichi Maezawa; Takashi Mizutani

doi:10.1109/EDL.1987.26611

A High-Speed Frequency Divider Using n⁺ -Ge Gate AlGaAs/GaAs MISFET's

Shuichi Fujita, Makoto Hirano, Koichi Maezawa, Takashi Mizutani

研究成果: Article › 査読

1 被引用数 (Scopus)

抄録

A high-speed divide-by-four static frequency divider is fabricated using n⁺-Ge gate AlGaAs/GaAs heterostructure MISFET's. The divider circuit consists of two master-slave T-type flip-flops (T-FF's) and an output buffer based on source-coupled FET logic (SCFL). A maximum toggle frequency of 11.3 GHz with a power dissipation of 219 mW per T-F/F is obtained at 300 K using 1.0-μm gate FET's.

本文言語	English
ページ（範囲）	226-227
ページ数	2
ジャーナル	IEEE Electron Device Letters
巻	8
号	5
DOI	https://doi.org/10.1109/EDL.1987.26611
出版ステータス	Published - 1987 5月

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
電子工学および電気工学

文献へのアクセス

10.1109/EDL.1987.26611

他のファイルとリンク

引用スタイル

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