@article{3777d3362df74824a1d28072488bc498,
title = " A hysteresis loop in electrical resistance of NbH x observed above the β - λ transition temperature ",
abstract = " We investigate the electron transport properties and structures of β-NbH x (010) epitaxial thin films on Al 2 O 3 (001) substrates with a variety of hydrogen contents. NbH x epitaxial thin films with x ≥ 0.77 exhibit a hysteresis loop in their resistance near room temperature. Notably, this hysteresis loop appears above the β-λ phase transition temperature. Detailed analysis of the temperature dependence of these structures suggests that the short-range ordering of hydrogen rearrangement in the λ-phase remains locally above the transition temperature, inducing the hysteresis in the resistance.",
author = "Yuki Sasahara and Ryota Shimizu and Hiroyuki Oguchi and Kazunori Nishio and Shohei Ogura and Hitoshi Morioka and Orimo, {Shin Ichi} and Katsuyuki Fukutani and Taro Hitosugi",
note = "Funding Information: R. S. acknowledges funding from JSPS Kakenhi Grant No. 17H05216, and JST-PRESTO Grant No. JPMJPR17N6, Japan. T. H. acknowledges funding from JSPS Kakenhi Grant Nos. 26246022, 26106502, 26108702, 26610092, 18H03876, 18H05513, 18H05514, and 18H05518, and JST-CREST (JPMJCR1523) program. This work was also performed under the Inter-university Cooperative Research Program of the Institute for Materials Research, Tohoku University (proposal No. 17K0060). The authors thank Prof. Hiroyuki Matsuzaki and Mr. Yuya Komatsu for assistance with NRA measurements. The authors thank Mr. Ryo Nakayama for fruitful discussions. Publisher Copyright: {\textcopyright} 2019 Author(s).",
year = "2019",
month = jan,
day = "1",
doi = "10.1063/1.5066367",
language = "English",
volume = "9",
journal = "AIP Advances",
issn = "2158-3226",
publisher = "American Institute of Physics Publising LLC",
number = "1",
}