A nanosized photodetector fabricated by electron-beam-induced deposition

K. Makise; K. Mitsuishi; M. Shimojo; K. Furuya

doi:10.1088/0957-4484/20/42/425305

A nanosized photodetector fabricated by electron-beam-induced deposition

K. Makise, K. Mitsuishi, M. Shimojo, K. Furuya

研究成果: Article › 査読

9 被引用数 (Scopus)

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A sensitive nanosized molybdenum oxide (MoO_x) photodetector is manufactured at a desired position by electron-beam-induced deposition (EBID). As-deposited MoO_x had a conductivity ∼300Scm^-1. After 2h annealing at 573K, the conductivity of nanowires decreased 10 times to ∼30Scm^-1 and MoO_x had photoconductivity. Nanosized MoO_x wires enhanced the sensitivity of optical devices due to an increased surface area to volume ratio.

本文言語	English
論文番号	425305
ジャーナル	Nanotechnology
巻	20
号	42
DOI	https://doi.org/10.1088/0957-4484/20/42/425305
出版ステータス	Published - 2009 10月 12
外部発表	はい

ASJC Scopus subject areas

バイオエンジニアリング
化学 (全般)
材料科学（全般）
材料力学
機械工学
電子工学および電気工学

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10.1088/0957-4484/20/42/425305

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abstract = "A sensitive nanosized molybdenum oxide (MoOx) photodetector is manufactured at a desired position by electron-beam-induced deposition (EBID). As-deposited MoOx had a conductivity ∼300Scm-1. After 2h annealing at 573K, the conductivity of nanowires decreased 10 times to ∼30Scm-1 and MoOx had photoconductivity. Nanosized MoOx wires enhanced the sensitivity of optical devices due to an increased surface area to volume ratio.",

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AB - A sensitive nanosized molybdenum oxide (MoOx) photodetector is manufactured at a desired position by electron-beam-induced deposition (EBID). As-deposited MoOx had a conductivity ∼300Scm-1. After 2h annealing at 573K, the conductivity of nanowires decreased 10 times to ∼30Scm-1 and MoOx had photoconductivity. Nanosized MoOx wires enhanced the sensitivity of optical devices due to an increased surface area to volume ratio.

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A nanosized photodetector fabricated by electron-beam-induced deposition

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