A New SOG Film Formation Technology Using A Room Temperature Fluoro-Alkoxy-Silane Treatment (FAST)

T.Homma T.Homma, Y.Murao Y.Murao, Tetsuya Homma

研究成果: Article › 査読

本文言語	English
ページ（範囲）	65-71
ジャーナル	Proceedings of 9th VLSI Multilevel Interconnection Conference
出版ステータス	Published - 1992 6月 9

引用スタイル

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title = "A New SOG Film Formation Technology Using A Room Temperature Fluoro-Alkoxy-Silane Treatment (FAST)",

author = "T.Homma T.Homma and Y.Murao Y.Murao and Tetsuya Homma",

year = "1992",

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language = "English",

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journal = "Proceedings of 9th VLSI Multilevel Interconnection Conference",

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AU - T.Homma, T.Homma

AU - Y.Murao, Y.Murao

AU - Homma, Tetsuya

PY - 1992/6/9

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M3 - Article

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EP - 71

JO - Proceedings of 9th VLSI Multilevel Interconnection Conference

JF - Proceedings of 9th VLSI Multilevel Interconnection Conference

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