A novel CoWP cap integration technology for lower leakage current and improved dielectric reliability is proposed for porous low-k/Cu interconnects, NH2 plasma treatment before SiCN deposition reduces leakage current and improves dielectric reliability such us time-dependent dielectric break-down (TDDB) of CoWP capped Cu interconnects. The TDDB lifetime much longer than 10 years is obtained. Moreover, the leakage current less than 1E-14A/mm is obtained by low-k top (LKT) dielectric structure combined with the NH3 plasma treatment. In addition. 10% lower RC product is obtained by the LKT structure with CoWP cap.