抄録
Oxygen transport in the silicon melt in the double-crucible method was simulated by using the k-ε{lunate} turbulent flow model. The high eddy diffusivity of oxygen calculated from the eddy dynamic viscosity is postulated in the present model. In the mechanisms found in the simulation, the small distance between the hot inner crucible and the melt/crystal interface was the most dominant reason for the increase of the oxygen concentration in the case of the double-crucible method.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 427-434 |
| ページ数 | 8 |
| ジャーナル | Journal of Crystal Growth |
| 巻 | 137 |
| 号 | 3-4 |
| DOI | |
| 出版ステータス | Published - 1994 4月 1 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 凝縮系物理学
- 無機化学
- 材料化学