A Photoresist Removal Process with Plasma Treatment Using Gas Containing Hydrogen after Aluminum Etching

M.Saito M.Saito, I.Touno I.Touno, K.Omiya K.Omiya, T.Homma T.Homma, T.Nagatomo T.Nagatomo, Tetsuya Homma

研究成果: Article › 査読

本文言語	English
ページ（範囲）	G451-G454
ジャーナル	Journal of the Electrochemical Society
巻	149
出版ステータス	Published - 2002 8月 1

引用スタイル

@article{71adcf96ab014df0bd736733e60c3807,

title = "A Photoresist Removal Process with Plasma Treatment Using Gas Containing Hydrogen after Aluminum Etching",

author = "M.Saito M.Saito and I.Touno I.Touno and K.Omiya K.Omiya and T.Homma T.Homma and T.Nagatomo T.Nagatomo and Tetsuya Homma",

year = "2002",

month = aug,

day = "1",

language = "English",

volume = "149",

pages = "G451--G454",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

}

TY - JOUR

T1 - A Photoresist Removal Process with Plasma Treatment Using Gas Containing Hydrogen after Aluminum Etching

AU - M.Saito, M.Saito

AU - I.Touno, I.Touno

AU - K.Omiya, K.Omiya

AU - T.Homma, T.Homma

AU - T.Nagatomo, T.Nagatomo

AU - Homma, Tetsuya

PY - 2002/8/1

Y1 - 2002/8/1

M3 - Article

SN - 0013-4651

VL - 149

SP - G451-G454

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

ER -