TY - GEN
T1 - A quarter-micron planarized interconnection technology with self-aligned plug
AU - Ueno, Kazuyoshi
AU - Ohto, K.
AU - Tsunenari, K.
AU - Kajiyana, K.
AU - Kikuta, K.
AU - Kikkawa, T.
PY - 1992/1/1
Y1 - 1992/1/1
N2 - In order to realize minimum pitch interconnections without degrading reliability, self-aligned contacts (SACs) between interconnections and plugs are necessary. The planarized interconnections with SAC plugs is formed for quarter-micron size as follows. Interconnection trenches and contact holes are formed using a self-aligned etch-stop layer, followed by simultaneous metal-filling into the trenches and contact holes. Si-rich oxide (SRO) films are found to be promising for a self-aligned etch-stop layer with their high etching selectivity to SiO2 as high as 10-30. Sufficiently low line resistance of 15 k Omega /cm and low contact resistance of 70 Omega /contact are obtained with the quarter-micron W-interconnection with the SAC plugs.
AB - In order to realize minimum pitch interconnections without degrading reliability, self-aligned contacts (SACs) between interconnections and plugs are necessary. The planarized interconnections with SAC plugs is formed for quarter-micron size as follows. Interconnection trenches and contact holes are formed using a self-aligned etch-stop layer, followed by simultaneous metal-filling into the trenches and contact holes. Si-rich oxide (SRO) films are found to be promising for a self-aligned etch-stop layer with their high etching selectivity to SiO2 as high as 10-30. Sufficiently low line resistance of 15 k Omega /cm and low contact resistance of 70 Omega /contact are obtained with the quarter-micron W-interconnection with the SAC plugs.
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U2 - 10.1109/IEDM.1992.307366
DO - 10.1109/IEDM.1992.307366
M3 - Conference contribution
AN - SCOPUS:84989419737
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 305
EP - 308
BT - 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
Y2 - 13 December 1992 through 16 December 1992
ER -