A Room Temperature Chemical Vapor Deposition SiOF Film Formation Technology for the Interlayer in Submicron Multilevel Interconnection

T.Homma T.Homma, R.Yamaguchi R.Yamaguchi, Y.Murao Y.Murao, Tetsuya Homma

研究成果: Article › 査読

本文言語	English
ページ（範囲）	687-692
ジャーナル	Journal of the Electrochemical Society
巻	140
出版ステータス	Published - 1993 3月 1

引用スタイル

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title = "A Room Temperature Chemical Vapor Deposition SiOF Film Formation Technology for the Interlayer in Submicron Multilevel Interconnection",

author = "T.Homma T.Homma and R.Yamaguchi R.Yamaguchi and Y.Murao Y.Murao and Tetsuya Homma",

year = "1993",

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language = "English",

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T1 - A Room Temperature Chemical Vapor Deposition SiOF Film Formation Technology for the Interlayer in Submicron Multilevel Interconnection

AU - T.Homma, T.Homma

AU - R.Yamaguchi, R.Yamaguchi

AU - Y.Murao, Y.Murao

AU - Homma, Tetsuya

PY - 1993/3/1

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VL - 140

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EP - 692

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

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