Absorption changes induced by UV-photon irradiation in Ge-doped SiO₂ thin films fabricated by plasma CVD method from tetraethoxysilane

Engineering & Materials Science

• Plasma CVD 100%
• Light absorption 83%
• Photons 65%
• Photosensitivity 59%
• Irradiation 56%
• Thin films 52%
• Polymers 40%
• Oxygen vacancies 28%
• Plasma enhanced chemical vapor deposition 26%
• Germanium 24%
• Vapors 16%
• Oxygen 14%
• Hydrogen 14%
• Defects 12%

Physics & Astronomy

• vapor deposition 42%
• irradiation 35%
• optical absorption 35%
• photosensitivity 32%
• photons 30%
• thin films 28%
• oxygen 16%
• germanium 12%
• vapor phases 11%
• hydrogen 8%
• defects 7%

Chemical Compounds

• Plasma Chemical Vapour Deposition 74%
• Absorptivity 53%
• Photosensitivity 46%
• Photon 35%
• Plasma Enhanced Chemical Vapour Deposition 22%
• Hydrogen 9%
• Dioxygen 8%