@article{009361c4a5ab4ed58eb9d9717ffcdbe4,
title = "AlGaN solar-blind Schottky photodiodes fabricated on 4H-SiC",
abstract = "Solar-blind AlGaN-based Schottky photodiodes grown on 4H-SiC substrate are reported. The fabricated devices demonstrate dark current density as low as 2.2 × 10-10 A/cm2 at a reverse bias of 5 V. A zero-bias peak responsivity of 44 mA/W was achieved at 256 nm, corresponding to an external quantum efficiency of 21%. Under a low illumination power density of 10 nW/cm2, a rejection ratio of more than two orders of magnitude was observed in the wavelength range from 270 to 310 nm. A room-temperature solar-blind detectivity of 7.9 × 1014 cm · Hz1/2W-1 was estimated at 256 nm under zero bias.",
keywords = "AlGaN, Dark current, Responsivity, Schottky photodiode, Solar blind",
author = "Hao Jiang and T. Egawa and H. Ishikawa",
note = "Funding Information: Manuscript received March 8, 2006; revised April 12, 2006. This work was supported by Intellectual Cluster Headquarters, Aichi Science and Technology Foundation. H. Jiang and T. Egawa are with the Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan (e-mail: jianghao_jp@yahoo.com). H. Ishikawa is with the Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Nagoya 466-8555, Japan. Digital Object Identifier 10.1109/LPT.2006.877351",
year = "2006",
month = jun,
day = "15",
doi = "10.1109/LPT.2006.877351",
language = "English",
volume = "18",
pages = "1353--1355",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",
}