An LSI for massive parallel electron beam lithography: Its design and evaluation

Hiroshi Miyaguchi; Masanori Muroyama; Shinya Yoshida; Naokatsu Ikegami; Akira Kojima; Ryosuke Kaneko; Kentaro Totsu; Shuji Tanaka; Nobuyoshi Koshida; Masayoshi Esashi

doi:10.1541/ieejsmas.135.374

An LSI for massive parallel electron beam lithography: Its design and evaluation

Hiroshi Miyaguchi, Masanori Muroyama, Shinya Yoshida, Naokatsu Ikegami, Akira Kojima, Ryosuke Kaneko, Kentaro Totsu, Shuji Tanaka, Nobuyoshi Koshida, Masayoshi Esashi

研究成果: Article › 査読

3 被引用数 (Scopus)

抄録

An LSI for the Massive Parallel Electron Beam Lithography using nc-Si (Nano Cristal Silicon) has been developed. It can drive a 100×100 electron emitter as an active matrix electron emitter with an innovative aberration correction scheme, a compensation scheme for electron beam intensity variation and a test circuit for testing LSI during integration on the system. This LSI was evaluated and confirmed its basic function of the active matrix, the electron emitter process variation compensation and the test for integrated devices.

本文言語	English
ページ（範囲）	374-381
ページ数	8
ジャーナル	IEEJ Transactions on Sensors and Micromachines
巻	135
号	10
DOI	https://doi.org/10.1541/ieejsmas.135.374
出版ステータス	Published - 2015 10月 1
外部発表	はい

ASJC Scopus subject areas

機械工学
電子工学および電気工学

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10.1541/ieejsmas.135.374

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AU - Miyaguchi, Hiroshi

AU - Muroyama, Masanori

AU - Yoshida, Shinya

AU - Ikegami, Naokatsu

AU - Kojima, Akira

AU - Kaneko, Ryosuke

AU - Totsu, Kentaro

AU - Tanaka, Shuji

AU - Koshida, Nobuyoshi

AU - Esashi, Masayoshi

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AB - An LSI for the Massive Parallel Electron Beam Lithography using nc-Si (Nano Cristal Silicon) has been developed. It can drive a 100×100 electron emitter as an active matrix electron emitter with an innovative aberration correction scheme, a compensation scheme for electron beam intensity variation and a test circuit for testing LSI during integration on the system. This LSI was evaluated and confirmed its basic function of the active matrix, the electron emitter process variation compensation and the test for integrated devices.

KW - Aberration correction

KW - Active matrix Variation compensation

KW - Electron beam lithography

KW - Element isolation

KW - Integrated circuit

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An LSI for massive parallel electron beam lithography: Its design and evaluation

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