An SiO2 Film Deposition Technology using Tetraethylorthosilicate (TEOS) and Ozone for Interlayer Metal Dielectrics

A.Kubo A.Kubo, T.Homma T.Homma, Y.Murao Y.Murao, Tetsuya Homma

研究成果: Article › 査読

本文言語	English
ページ（範囲）	1769-1773
ジャーナル	Journal of the Electrochemical Society
巻	143
出版ステータス	Published - 1996 5月 1

引用スタイル

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title = "An SiO2 Film Deposition Technology using Tetraethylorthosilicate (TEOS) and Ozone for Interlayer Metal Dielectrics",

author = "A.Kubo A.Kubo and T.Homma T.Homma and Y.Murao Y.Murao and Tetsuya Homma",

year = "1996",

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T1 - An SiO2 Film Deposition Technology using Tetraethylorthosilicate (TEOS) and Ozone for Interlayer Metal Dielectrics

AU - A.Kubo, A.Kubo

AU - T.Homma, T.Homma

AU - Y.Murao, Y.Murao

AU - Homma, Tetsuya

PY - 1996/5/1

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EP - 1773

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

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