抄録
Two-dimensional analysis of off-state breakdown characteristics of source field-plate AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of field plate is effective in improving the breakdown voltage, but it can decrease with the field-plate length, hence its optimum length should exist. It is also shown that the breakdown voltage of the source field-plate structure is a little lower than that of the gate field-plate structure when the field-plate length is short, because the electric field at the drain edge of the gate becomes higher.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 350-353 |
| ページ数 | 4 |
| ジャーナル | Physica Status Solidi (C) Current Topics in Solid State Physics |
| 巻 | 13 |
| 号 | 5-6 |
| DOI | |
| 出版ステータス | Published - 2016 5月 1 |
ASJC Scopus subject areas
- 凝縮系物理学