Analysis of correlation between breakdown characteristics and gate-lag phenomena in narrowly-recessed-gate GaAs MESFETs

Y. Mitani, D. Kasai, K. Horio

研究成果: Article › 査読

本文言語	English
ページ（範囲）	157-160
ジャーナル	Proceedings of the 10th European Gallium Arsenide & Other Semiconductor Application Symposium (GAAS 2002), Milan, Italy
出版ステータス	Published - 2002 9月 1

引用スタイル

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JO - Proceedings of the 10th European Gallium Arsenide & Other Semiconductor Application Symposium (GAAS 2002), Milan, Italy

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