Analysis of drain lag and power compression in GaN MESFET

K. Horio, K. Yonemoto

研究成果: Article › 査読

本文言語	English
ページ（範囲）	567-569
ジャーナル	Proceedings of the 12th European Gallium Arsenide & Other Semiconductor Application Symposium (GAAS 2004), Amsterdam The Netherlands
出版ステータス	Published - 2004 10月 1

引用スタイル

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title = "Analysis of drain lag and power compression in GaN MESFET",

author = "K. Horio and K. Yonemoto",

year = "2004",

month = oct,

day = "1",

language = "English",

pages = "567--569",

journal = "Proceedings of the 12th European Gallium Arsenide & Other Semiconductor Application Symposium (GAAS 2004), Amsterdam The Netherlands",

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T1 - Analysis of drain lag and power compression in GaN MESFET

AU - Horio, K.

AU - Yonemoto, K.

PY - 2004/10/1

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M3 - Article

SP - 567

EP - 569

JO - Proceedings of the 12th European Gallium Arsenide & Other Semiconductor Application Symposium (GAAS 2004), Amsterdam The Netherlands

JF - Proceedings of the 12th European Gallium Arsenide & Other Semiconductor Application Symposium (GAAS 2004), Amsterdam The Netherlands

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