Turn-on characteristics of GaAs MESFETs are simulated in which substrate traps and surface states are considered. Quasi-pulsed I-V curves are derived from the turn-on characteristics, indicating that so-called power slump could occur both due to substrate traps and due to surface states. Transient simulations of GaN MESFETs are also performed in which deep levels in a semi-insulating buffer layer are considered. So-called drain lag is shown to arise as in GaAs MESFETs. It is also shown that the power slump in GaN MESFETs could occur due to deep levels in the semi-insulating buffer layer.
|出版ステータス||Published - 2005 12月 1|
|イベント||20th Symposium on Microelectronics Technology and Devices, SBMicro 2005 - Florianopolis, Brazil|
継続期間: 2005 9月 4 → 2005 9月 7
|Conference||20th Symposium on Microelectronics Technology and Devices, SBMicro 2005|
|Period||05/9/4 → 05/9/7|
ASJC Scopus subject areas