Analysis of removal of surface-state-related lags and current slump in GaAs FETs

H. Hafiz; Masatoshi Kumeno; Kazushige Horio

doi:10.1109/LED.2013.2279833

Analysis of removal of surface-state-related lags and current slump in GaAs FETs

H. Hafiz, Masatoshi Kumeno, Kazushige Horio

研究成果: Article › 査読

2 被引用数 (Scopus)

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Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that drain lag and current slump because of surface states are reduced by introducing a field plate longer than the surface-state region. Dependence of drain lag, gate lag, and current slump on the field-plate length and SiO₂ passivation layer thickness is studied, indicating that the lags and current slump can be completely removed in a case with a thin SiO₂ layer.

本文言語	English
論文番号	6603270
ページ（範囲）	1361-1363
ページ数	3
ジャーナル	IEEE Electron Device Letters
巻	34
号	11
DOI	https://doi.org/10.1109/LED.2013.2279833
出版ステータス	Published - 2013 11月 13

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
電子工学および電気工学

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10.1109/LED.2013.2279833

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abstract = "Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that drain lag and current slump because of surface states are reduced by introducing a field plate longer than the surface-state region. Dependence of drain lag, gate lag, and current slump on the field-plate length and SiO2 passivation layer thickness is studied, indicating that the lags and current slump can be completely removed in a case with a thin SiO2 layer.",

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AU - Hafiz, H.

AU - Kumeno, Masatoshi

AU - Horio, Kazushige

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Y1 - 2013/11/13

N2 - Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that drain lag and current slump because of surface states are reduced by introducing a field plate longer than the surface-state region. Dependence of drain lag, gate lag, and current slump on the field-plate length and SiO2 passivation layer thickness is studied, indicating that the lags and current slump can be completely removed in a case with a thin SiO2 layer.

AB - Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that drain lag and current slump because of surface states are reduced by introducing a field plate longer than the surface-state region. Dependence of drain lag, gate lag, and current slump on the field-plate length and SiO2 passivation layer thickness is studied, indicating that the lags and current slump can be completely removed in a case with a thin SiO2 layer.

KW - 2-D analysis

KW - GaAs field effect transistor (FET)

KW - current slump

KW - drain lag

KW - gate lag

KW - surface state

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Analysis of removal of surface-state-related lags and current slump in GaAs FETs

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