抄録
This study theoretically demonstrates that the gate-lag in recessed-gate GaAs MESFETs may not be completely suppressed when the deep-acceptor-like surface state acts as a hole trap, because the thickness of surface depletion layer can change much by the applied gate voltage. Abnormal current overshoot arise due to deep traps in the substrate when the off-state gate voltage is deeply negative.
| 本文言語 | English |
|---|---|
| ページ | 101-103 |
| ページ数 | 3 |
| 出版ステータス | Published - 1997 12月 1 |
| イベント | Proceedings of the 1997 GaAs Reliability Workshop - Anaheim, CA, USA 継続期間: 1997 10月 12 → 1997 10月 12 |
Other
| Other | Proceedings of the 1997 GaAs Reliability Workshop |
|---|---|
| City | Anaheim, CA, USA |
| Period | 97/10/12 → 97/10/12 |
ASJC Scopus subject areas
- 材料科学（全般）
- 物理学および天文学（全般）