Analysis of trap-parameter dependence of lag phenomena and current collapse in GaN FETs

H. Takayanagi, H. Nakano, K. Itagaki, K. Horio

研究成果: Article › 査読

本文言語	English
ページ（範囲）	1062-1063
ジャーナル	Extended abstracts of 2005 International Conference on Solid State Devices and Materials (SSDM 2005), Kobe, Japan
出版ステータス	Published - 2005 9月 15

引用スタイル

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title = "Analysis of trap-parameter dependence of lag phenomena and current collapse in GaN FETs",

author = "H. Takayanagi and H. Nakano and K. Itagaki and K. Horio",

year = "2005",

month = sep,

day = "15",

language = "English",

pages = "1062--1063",

journal = "Extended abstracts of 2005 International Conference on Solid State Devices and Materials (SSDM 2005), Kobe, Japan",

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TY - JOUR

T1 - Analysis of trap-parameter dependence of lag phenomena and current collapse in GaN FETs

AU - Takayanagi, H.

AU - Nakano, H.

AU - Itagaki, K.

AU - Horio, K.

PY - 2005/9/15

Y1 - 2005/9/15

M3 - Article

SP - 1062

EP - 1063

JO - Extended abstracts of 2005 International Conference on Solid State Devices and Materials (SSDM 2005), Kobe, Japan

JF - Extended abstracts of 2005 International Conference on Solid State Devices and Materials (SSDM 2005), Kobe, Japan

ER -