Analysis of trap-related kink dynamics in GaAs MESFETs

Kazushige Horio; A. Wakabayashi; Y. Mitani

doi:10.1109/SIM.2000.939256

Analysis of trap-related kink dynamics in GaAs MESFETs

Kazushige Horio, A. Wakabayashi, Y. Mitani

研究成果: Conference contribution

抄録

Effects of surface states and substrate traps on the «kink» (an abnormal increase in output conductance with the drain voltage) in GaAs MESFETs are studied by 2-D analysis. It is shown that the kink could also arise due to the surface-state effects: impact ionization of holes and the following hole trapping by the surface states. Transient or dynamic simulation indicates that the trap-related kink phenomena ate rather slow processes with long response times.

本文言語	English
ホスト出版物のタイトル	IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	337-340
ページ数	4
巻	2000-January
ISBN（印刷版）	0780358147
DOI	https://doi.org/10.1109/SIM.2000.939256
出版ステータス	Published - 2000
イベント	11th International Semiconducting and Insulating Materials Conference, SIMC 2000 - Canberra, Australia 継続期間: 2000 7月 3 → 2000 7月 7

Other

Other	11th International Semiconducting and Insulating Materials Conference, SIMC 2000
国/地域	Australia
City	Canberra
Period	00/7/3 → 00/7/7

ASJC Scopus subject areas

電子工学および電気工学
電子材料、光学材料、および磁性材料
凝縮系物理学

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10.1109/SIM.2000.939256

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引用スタイル

Horio, K, Wakabayashi, A & Mitani, Y 2000, Analysis of trap-related kink dynamics in GaAs MESFETs. in IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC. vol. 2000-January, 939256, Institute of Electrical and Electronics Engineers Inc., pp. 337-340, 11th International Semiconducting and Insulating Materials Conference, SIMC 2000, Canberra, Australia, 00/7/3. https://doi.org/10.1109/SIM.2000.939256

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title = "Analysis of trap-related kink dynamics in GaAs MESFETs",

abstract = "Effects of surface states and substrate traps on the «kink» (an abnormal increase in output conductance with the drain voltage) in GaAs MESFETs are studied by 2-D analysis. It is shown that the kink could also arise due to the surface-state effects: impact ionization of holes and the following hole trapping by the surface states. Transient or dynamic simulation indicates that the trap-related kink phenomena ate rather slow processes with long response times.",

keywords = "Electron traps, Energy states, Gallium arsenide, Impact ionization, MESFETs, Poisson equations, Steady-state, Surface treatment, Systems engineering and theory, Voltage",

author = "Kazushige Horio and A. Wakabayashi and Y. Mitani",

year = "2000",

doi = "10.1109/SIM.2000.939256",

language = "English",

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AU - Wakabayashi, A.

AU - Mitani, Y.

PY - 2000

Y1 - 2000

N2 - Effects of surface states and substrate traps on the «kink» (an abnormal increase in output conductance with the drain voltage) in GaAs MESFETs are studied by 2-D analysis. It is shown that the kink could also arise due to the surface-state effects: impact ionization of holes and the following hole trapping by the surface states. Transient or dynamic simulation indicates that the trap-related kink phenomena ate rather slow processes with long response times.

AB - Effects of surface states and substrate traps on the «kink» (an abnormal increase in output conductance with the drain voltage) in GaAs MESFETs are studied by 2-D analysis. It is shown that the kink could also arise due to the surface-state effects: impact ionization of holes and the following hole trapping by the surface states. Transient or dynamic simulation indicates that the trap-related kink phenomena ate rather slow processes with long response times.

KW - Electron traps

KW - Energy states

KW - Gallium arsenide

KW - Impact ionization

KW - MESFETs

KW - Poisson equations

KW - Steady-state

KW - Surface treatment

KW - Systems engineering and theory

KW - Voltage

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DO - 10.1109/SIM.2000.939256

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SN - 0780358147

VL - 2000-January

SP - 337

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BT - IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 11th International Semiconducting and Insulating Materials Conference, SIMC 2000

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ER -

Analysis of trap-related kink dynamics in GaAs MESFETs

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