TY - JOUR
T1 - Anisotropic resistivity and Hall effect in (formula presented) single crystals
AU - Eltsev, Yu
AU - Nakao, K.
AU - Lee, S.
AU - Masui, T.
AU - Chikumoto, N.
AU - Tajima, S.
AU - Koshizuka, N.
AU - Murakami, M.
PY - 2002
Y1 - 2002
N2 - We report resistivity and the Hall-effect measurements in the normal and superconducting states of (formula presented) single crystals. The resistivity has been found to be anisotropic with slightly temperature-dependent resistivity ratio of about 3.5. The Hall constant, with a magnetic field parallel to the Mg and B sheets, is negative in contrast to the holelike Hall response with a field directed along the c axis, indicating presence of both types of charge carriers and, thus, the multiband electronic structure of (formula presented) The Hall effect in the mixed state shows no sign change anomaly, reproducing Hall-effect behavior in clean limit type-II superconductors.
AB - We report resistivity and the Hall-effect measurements in the normal and superconducting states of (formula presented) single crystals. The resistivity has been found to be anisotropic with slightly temperature-dependent resistivity ratio of about 3.5. The Hall constant, with a magnetic field parallel to the Mg and B sheets, is negative in contrast to the holelike Hall response with a field directed along the c axis, indicating presence of both types of charge carriers and, thus, the multiband electronic structure of (formula presented) The Hall effect in the mixed state shows no sign change anomaly, reproducing Hall-effect behavior in clean limit type-II superconductors.
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U2 - 10.1103/PhysRevB.66.180504
DO - 10.1103/PhysRevB.66.180504
M3 - Article
AN - SCOPUS:84880320165
SN - 1098-0121
VL - 66
SP - 1
EP - 4
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 18
ER -