TY - GEN
T1 - Breakdown voltage in silicon carbide metal-oxide-semiconductor devices induced by ion beams
AU - Ohshima, T.
AU - Deki, M.
AU - Makino, T.
AU - Iwamoto, N.
AU - Onoda, S.
AU - Hirao, T.
AU - Kojima, K.
AU - Tomita, T.
AU - Matsuo, S.
AU - Hashimoto, S.
PY - 2013/5/20
Y1 - 2013/5/20
N2 - Metal-Oxide-Semiconductor (MOS) capacitors fabricated on 4H silicon carbide (SiC) were irradiated with heavy ions at energies of up to 454 MeV. The currents observed through the gate oxide of the MOS capacitors were monitored under biased conditions during ion irradiation. Under ion irradiation, the dielectric breakdown was observed at lower electric fields compared to the case under non-irradiation condition. The value of the electric field, at which the dielectric breakdown was obtained, decreased with increasing linear energy transfer (LET) of the incident ions.
AB - Metal-Oxide-Semiconductor (MOS) capacitors fabricated on 4H silicon carbide (SiC) were irradiated with heavy ions at energies of up to 454 MeV. The currents observed through the gate oxide of the MOS capacitors were monitored under biased conditions during ion irradiation. Under ion irradiation, the dielectric breakdown was observed at lower electric fields compared to the case under non-irradiation condition. The value of the electric field, at which the dielectric breakdown was obtained, decreased with increasing linear energy transfer (LET) of the incident ions.
KW - Heavy Ions
KW - Metal-Oxide-Semiconductor (MOS)
KW - Silicon Carbide (SiC)
KW - Single Event Gate Rupture
UR - http://www.scopus.com/inward/record.url?scp=84877734283&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84877734283&partnerID=8YFLogxK
U2 - 10.1063/1.4802408
DO - 10.1063/1.4802408
M3 - Conference contribution
AN - SCOPUS:84877734283
SN - 9780735411487
T3 - AIP Conference Proceedings
SP - 654
EP - 658
BT - Application of Accelerators in Research and Industry - Twenty-Second International Conference
T2 - 22nd International Conference on the Application of Accelerators in Research and Industry, CAARI 2012
Y2 - 5 August 2012 through 10 August 2012
ER -