TY - GEN
T1 - Cavity less GaAs CW sub-THz TUNNETT oscillators
AU - Sundararajan, B.
AU - Endo, Kazuomi
AU - Tanabe, Tadao
AU - Oyama, Yutaka
AU - Plotka, Piotr
AU - Nishizawa, Jun Ichi
PY - 2009
Y1 - 2009
N2 - Tunnel injection transit time diodes (TUNNETT) with 14 nm tunneling layer thicknesses were fabricated with molecular layer epitaxy, and planar patch antennas were designed for 200GHz and 300GHz emission. From the fabricated patch antenna coupled with TUNNETT oscillator, the obtained oscillation frequency was ranging in 177-235 GHz at room temperature with bias current of 300-550 mA (duty 5 %)
AB - Tunnel injection transit time diodes (TUNNETT) with 14 nm tunneling layer thicknesses were fabricated with molecular layer epitaxy, and planar patch antennas were designed for 200GHz and 300GHz emission. From the fabricated patch antenna coupled with TUNNETT oscillator, the obtained oscillation frequency was ranging in 177-235 GHz at room temperature with bias current of 300-550 mA (duty 5 %)
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U2 - 10.1109/ICIMW.2009.5324720
DO - 10.1109/ICIMW.2009.5324720
M3 - Conference contribution
AN - SCOPUS:72749117635
SN - 9781424454174
T3 - 34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009
BT - 34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009
T2 - 34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009
Y2 - 21 September 2009 through 25 September 2009
ER -