TY - GEN
T1 - Characteristics of several high-k gate insulators for GaN power device
AU - Nabatame, Toshihide
AU - Maeda, Erika
AU - Inoue, Mari
AU - Hirose, Masafumi
AU - Kiyono, Hajime
AU - Irokawa, Yoshihiro
AU - Shiozaki, Koji
AU - Koide, Yasuo
N1 - Funding Information:
The authors wish to thank Prof. T. Hashizume of Hokkaido University for helpful discussion. This work was supported by the Ministry of Education, Culture, Sports, Science and Technology (MEXT) "Program for research and development of next-generation semiconductor to realize energy-saving society." We also appreciate the support of the members of Toyoda Gosei Co., Ltd. The author wish to thank the members of the nanofabrication group of the National Institute for Materials Science for their support during this study.
Publisher Copyright:
© The Electrochemical Society.
PY - 2019
Y1 - 2019
N2 - We systematically investigated characteristics of Pt-gated capacitors with four kinds of gate insulators such as Hfo.57Sio.43Ox, Hf0.64Si0.36Ox, HfO2, and Al2O3. The Hf0.64Si0.36Ox films fabricated by post-deposition annealing (PDA) at 800°C in O2 (PDO), N2 (PDN), and 3%H2 (PDH) ambient exhibited quite different characteristics. After PDO, the Hf0.64Si0.36Ox film was partially crystallized and had a thick interfacial layer at the n-GaN/Hf0.64Si0.36Ox interface, while the Hf0.64Si0.36Ox films after PDN and PDH maintained an amorphous structure. The PDH capacitor exhibited an order of magnitude larger interface state density than the PDN capacitor, indicating that the PDN process can produce superior Hf0.64Si0.36Ox film. The Hf0.57Si0.43Ox, Hf0.64Si0.36Ox, HfO2, and Al2O3 films after PDA at 800°C in N2 were 15.4, 15.9, 17.6, and 9, respectively. The HfO2 and Al2O3 films consist of polycrystalline structure while the Hf0.57Si0.43Ox and Hf0.64Si0.36Ox films maintain an amorphous structure. The different structure strongly affected to electrical properties. The Hf0.57Si0.43Ox and Hf0.64Si0.36Ox capacitors showed superior electrical properties such as a minimal flatband voltage (Vfo) hysteresis (≤ +70 mV) and a small Vfo, shift (≤ -0.46 V), as well as a low interface state density (∼ 3 × 1011 cm-2eV-1 at -0.45 eV from conduction band), and a high breakdown electric field (≥ 8.6 MV/cm) compared to those of the HfO2 and Al2O3 capacitors.
AB - We systematically investigated characteristics of Pt-gated capacitors with four kinds of gate insulators such as Hfo.57Sio.43Ox, Hf0.64Si0.36Ox, HfO2, and Al2O3. The Hf0.64Si0.36Ox films fabricated by post-deposition annealing (PDA) at 800°C in O2 (PDO), N2 (PDN), and 3%H2 (PDH) ambient exhibited quite different characteristics. After PDO, the Hf0.64Si0.36Ox film was partially crystallized and had a thick interfacial layer at the n-GaN/Hf0.64Si0.36Ox interface, while the Hf0.64Si0.36Ox films after PDN and PDH maintained an amorphous structure. The PDH capacitor exhibited an order of magnitude larger interface state density than the PDN capacitor, indicating that the PDN process can produce superior Hf0.64Si0.36Ox film. The Hf0.57Si0.43Ox, Hf0.64Si0.36Ox, HfO2, and Al2O3 films after PDA at 800°C in N2 were 15.4, 15.9, 17.6, and 9, respectively. The HfO2 and Al2O3 films consist of polycrystalline structure while the Hf0.57Si0.43Ox and Hf0.64Si0.36Ox films maintain an amorphous structure. The different structure strongly affected to electrical properties. The Hf0.57Si0.43Ox and Hf0.64Si0.36Ox capacitors showed superior electrical properties such as a minimal flatband voltage (Vfo) hysteresis (≤ +70 mV) and a small Vfo, shift (≤ -0.46 V), as well as a low interface state density (∼ 3 × 1011 cm-2eV-1 at -0.45 eV from conduction band), and a high breakdown electric field (≥ 8.6 MV/cm) compared to those of the HfO2 and Al2O3 capacitors.
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U2 - 10.1149/09204.0109ecst
DO - 10.1149/09204.0109ecst
M3 - Conference contribution
AN - SCOPUS:85076995502
SN - 9781607688785
T3 - ECS Transactions
SP - 109
EP - 117
BT - Semiconductor Process Integration 11
A2 - Murota, J.
A2 - Claeys, C.
A2 - Iwai, H.
A2 - Tao, M.
A2 - Deleonibus, S.
A2 - Mai, A.
A2 - Shiojima, K.
A2 - Cao, Y.
PB - Electrochemical Society Inc.
T2 - 11th Symposium on Semiconductor Process Integration - 236th ECS Meeting
Y2 - 13 October 2019 through 17 October 2019
ER -