Characteristics of SiOF Films Deposited Using Tetrathylorthosilicate (TEOS) and Fluorotriethoxysilane (FTES) at Room Temperature by chemicalVaper Deposition

T. Homma

Characteristics of SiOF Films Deposited Using Tetrathylorthosilicate (TEOS) and Fluorotriethoxysilane (FTES) at Room Temperature by chemicalVaper Deposition

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研究成果: Article › 査読

本文言語	English
ページ（範囲）	707-711
ジャーナル	Journal of the Electrochemical Society
巻	143
出版ステータス	Published - 1996 2月 1

引用スタイル

@article{fc54002a6af4476d87779a91bf985819,

title = "Characteristics of SiOF Films Deposited Using Tetrathylorthosilicate (TEOS) and Fluorotriethoxysilane (FTES) at Room Temperature by chemicalVaper Deposition",

author = "T. Homma",

year = "1996",

month = feb,

day = "1",

language = "English",

volume = "143",

pages = "707--711",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

}