Characterization of Current-Induced Degradation in Be-Doped HBTs Based on GaAs and InP.

S.Tanaka S.Tanaka, S.Tanaka H.Shimawaki K.Kasahara, K.Honjo K.Honjo, Shinichi Tanaka

研究成果: Article › 査読

本文言語	English
ページ（範囲）	1194-1201
ジャーナル	IEEE Transaction on Electron Devices
巻	40
出版ステータス	Published - 1993 7月 1

引用スタイル

@article{fbc6ae71fefb4de8866a37dde903b770,

title = "Characterization of Current-Induced Degradation in Be-Doped HBTs Based on GaAs and InP.",

author = "S.Tanaka S.Tanaka and K.Kasahara, {S.Tanaka H.Shimawaki} and K.Honjo K.Honjo and Shinichi Tanaka",

year = "1993",

month = jul,

day = "1",

language = "English",

volume = "40",

pages = "1194--1201",

journal = "IEEE Transaction on Electron Devices",

}