Characterization of different-Al-content AlxGa1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire

S. Arulkumaran; T. Egawa; H. Ishikawa; T. Jimbo

Characterization of different-Al-content Al_xGa_1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire

S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo

研究成果: Article › 査読

抄録

A study of characterization of different-Al-content Al_xGa_1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire was presented. Al_xGa_1-xN/GaN heterostructures were grown on a sapphire substrate by atmospheric pressure metalorganic chemical vapor deposition. An increase of two-dimensional-electron-gas (2DEG) mobility with the increase of Al content was observed which was due to the strain induced piezoelectric and spontaneous polarization.

本文言語	English
ページ（範囲）	888-894
ページ数	7
ジャーナル	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
巻	21
号	2
出版ステータス	Published - 2003 3月 1
外部発表	はい

ASJC Scopus subject areas

凝縮系物理学
電子工学および電気工学

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引用スタイル

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abstract = "A study of characterization of different-Al-content AlxGa1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire was presented. AlxGa1-xN/GaN heterostructures were grown on a sapphire substrate by atmospheric pressure metalorganic chemical vapor deposition. An increase of two-dimensional-electron-gas (2DEG) mobility with the increase of Al content was observed which was due to the strain induced piezoelectric and spontaneous polarization.",

author = "S. Arulkumaran and T. Egawa and H. Ishikawa and T. Jimbo",

year = "2003",

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language = "English",

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journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

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AU - Egawa, T.

AU - Ishikawa, H.

AU - Jimbo, T.

PY - 2003/3/1

Y1 - 2003/3/1

N2 - A study of characterization of different-Al-content AlxGa1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire was presented. AlxGa1-xN/GaN heterostructures were grown on a sapphire substrate by atmospheric pressure metalorganic chemical vapor deposition. An increase of two-dimensional-electron-gas (2DEG) mobility with the increase of Al content was observed which was due to the strain induced piezoelectric and spontaneous polarization.

AB - A study of characterization of different-Al-content AlxGa1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire was presented. AlxGa1-xN/GaN heterostructures were grown on a sapphire substrate by atmospheric pressure metalorganic chemical vapor deposition. An increase of two-dimensional-electron-gas (2DEG) mobility with the increase of Al content was observed which was due to the strain induced piezoelectric and spontaneous polarization.

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JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 2

ER -

Characterization of different-Al-content AlxGa1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire

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ASJC Scopus subject areas

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Characterization of different-Al-content Al_xGa_1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire