Characterization of different-Al-content Al_xGa_1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire

Engineering & Materials Science

• Atmospheric pressure 31%
• Heterojunctions 74%
• High electron mobility transistors 65%
• Metallorganic chemical vapor deposition 44%
• Polarization 26%
• Sapphire 76%
• Substrates 20%
• Two dimensional electron gas 100%

Physics & Astronomy

• atmospheric pressure 25%
• characterization 31%
• electron gas 27%
• high electron mobility transistors 58%
• metalorganic chemical vapor deposition 27%
• polarization 15%
• sapphire 48%