@article{44ab346613464d3a8a731992c3513820,
title = "Characterization of GaInN light-emitting diodes with distributed Bragg reflector grown on Si",
abstract = "We report the improved characteristics of GaInN multiple-quantum-well (MQW) light-emitting diodes (LEDs) on Si substrate by an insertion of distributed Bragg reflector (DBR). The DBR-based GaInN MQW LED structures were grown on 2-in-diameter n-Si (111) substrates using a metalorganic chemical vapor deposition method. The number of Al0.3Ga0.7N/AlN pairs in DBR was changed from 1 to 5. No cracks were observed over the entire area of the DBR-based LED structure with less than 3-pair DBR. The light output power of the 3-pair DBR-based LED is approximately two times larger than that of the non-DBR-based LED.",
keywords = "A3. Metalorganic chemical vapor deposition, B1. Nitrides, B3. Light-emitting diodes",
author = "Hiroyasu Ishikawa and Baijun Zhang and Kenta Asano and Takashi Egawa and Takashi Jimbo",
note = "Funding Information: The authors would like to thank Dr. M.S. Hao and Dr. S. Arulkumaran for helpful discussions. This work is partially supported by Industrial Technology Research Grant Program in {\textquoteright}02 from New Energy and Industrial Technology Development Organization (NEDO) of Japan, a Special Coordination Funds for Promoting Science and Technology from The Ministry of Education, Culture, Sports, Science, and Technology.",
year = "2004",
month = dec,
day = "10",
doi = "10.1016/j.jcrysgro.2004.08.054",
language = "English",
volume = "272",
pages = "322--326",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-4 SPEC. ISS.",
}