We investigate the mechanisms of defect formation and optical absorption induced by ion implantation, for fabrication of optical devices by radiation effects. High-purity silica implanted by H+ or He2+ was characterized using vacuum-ultraviolet spectroscopy and electron-spin-resonance measurement. Defect formation is suppressed by OH groups, possibly by the release of atomic hydrogen. The E′ center and nonbridging oxygen hole center were created through pair generation from the normal Si-O-Si bond. The peroxy radical was generated through the reaction of the E′ center with interstitial oxygen, which is a Frenkel-defect pair with an oxygen vacancy. By the Kramers-Kronig analysis on the MeV-ion implantation-induced defects, a refractive index increase of the order of 10-4 was estimated.
|Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
|Published - 2002 5月
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