@inproceedings{0d5fa99fc88f4881b5d45b083d332998,
title = "Cross-sectional TEM analysis of structural change in 4H-SiC single crystal irradiated by femtosecond laser pulses",
abstract = "We carried out cross-sectional transmission electron microscopy (TEM) investigation of femtosecond laser-induced ripples formed on 4H-SiC single crystal surface. Here, we paid attention to the crystal structures underlying the coarse and fine ripples and the three-dimensional distribution of amorphous phase. Conventional and high-resolution TEM analyses made clear that a continuous amorphous layer approximately of 50 nm thick exist at the topmost region of both coarse and fine ripples. The result strongly suggests that the fundamental surface deformation process is common for coarse and fine ripples, even though the factors which determine their periods are different.",
keywords = "4H-SiC, Femotosecond laser, Ripple, Transmission electron microscopy",
author = "Hiroyuki Kawahara and Tatsuya Okada and Ryota Kumai and Takuro Tomita and Shigeki Matsuo and Shuichi Hashimoto and Makoto Yamaguchi",
year = "2009",
month = jan,
day = "1",
language = "English",
isbn = "9780878493579",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "883--886",
editor = "Takashi Fuyuki and Hajime Okumura and Kenji Fukuda and Shin-ichi Nishizawa and Tsunenobu Kimoto and Akira Suzuki",
booktitle = "Silicon Carbide and Related Materials 2007",
note = "12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 ; Conference date: 14-10-2007 Through 19-10-2007",
}