抄録
We observed the pseudo spin-gap behavior in the T-dependences of 63Cu Knight shift and NMR relaxation rates, as well as electrical resistivity, over a wide doping range for the bilayer high-Tc HgBa2CaCu2O6+δ using 63Cu NMR spin-echo technique. We found a difference in the doping dependence of the pseudo spin-gap behavior between HgBa2CaCu2O6+δ and the previous monolayer HgBa2CuO4+δ. The results indicate that the pseudo spin-gap behavior strongly depends on the underlying electronic states.
本文言語 | English |
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ページ(範囲) | 2212-2214 |
ページ数 | 3 |
ジャーナル | Journal of the Physical Society of Japan |
巻 | 67 |
号 | 7 |
DOI | |
出版ステータス | Published - 1998 1月 1 |
外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学(全般)