抄録
To improve the crystallinity of multilayer graphene (MLG) directly deposited on SiO2 for interconnect applications, a new solid phase precipitation (SPP) process involving current stress is investigated. It is found that the MLG crystallinity precipitated from a Cu capped Co-C layer can be improved by the vertical current to the Cu/Co-C but not by the horizontal current. The current enhanced SPP (CE-SPP) is expected as a mean to improve the MLG crystallinity directly deposited on SiO2.
本文言語 | English |
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ホスト出版物のタイトル | 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings |
出版社 | Institute of Electrical and Electronics Engineers Inc. |
ページ | 244-246 |
ページ数 | 3 |
ISBN(電子版) | 9781509046591 |
DOI | |
出版ステータス | Published - 2017 6月 13 |
イベント | 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, Japan 継続期間: 2017 2月 28 → 2017 3月 2 |
Other
Other | 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 |
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国/地域 | Japan |
City | Toyama |
Period | 17/2/28 → 17/3/2 |
ASJC Scopus subject areas
- ハードウェアとアーキテクチャ
- 電子工学および電気工学