Current-Voltage Characteristics of an AlGaAs/GaAs Heterostructure FET for High Gate Voltages

M. Hirano, Y. Takanashi, T. Sugeta

研究成果: Article査読

5 被引用数 (Scopus)

抄録

Drain-to-source current for high gate voltages in AlGaAs/GaAs heterostructure FET's (HFET's) is found to depend on the electron saturation velocity in the AlGaAs layer. A simple model, which takes into account the current through the undepleted channel in the AlGaAs layer as a function of the electron saturation velocity in AlGaAs, is proposed for describing I-V characteristics of HFET's for high gate voltages. Using the model, effective electron saturation velocity in AlxGa1_xAs for different Al content levels has been obtained from the analysis of the present experimental results; 7 × 106 cm/s for x = 0.24 and 3 × 106 cm/s for x = 0.3 at a 4 × 1017 cm-3 doping concentration.

本文言語English
ページ(範囲)496-499
ページ数4
ジャーナルIEEE Electron Device Letters
5
11
DOI
出版ステータスPublished - 1984 11月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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