TY - GEN
T1 - Deformation Behavior of Pressurized Sintered Ag Nanoparticles in Discrete Type Power Semiconductor Device
AU - Nagata, Kiichi
AU - Kariya, Yoshiharu
AU - Horie, Shoji
PY - 2019/5
Y1 - 2019/5
N2 - Creep deformation analysis of die attach materials in a discrete type power semiconductor device under the operating conditions were performed. Pressurized sintered Ag nanoparticles are superior in creep deformation resistance at any period between on time and off time and \varepsilon-{\mathrm {in}} per cycle was about 60% of Sn-3.0Ag-0.5Cu alloy.
AB - Creep deformation analysis of die attach materials in a discrete type power semiconductor device under the operating conditions were performed. Pressurized sintered Ag nanoparticles are superior in creep deformation resistance at any period between on time and off time and \varepsilon-{\mathrm {in}} per cycle was about 60% of Sn-3.0Ag-0.5Cu alloy.
UR - http://www.scopus.com/inward/record.url?scp=85068355112&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85068355112&partnerID=8YFLogxK
U2 - 10.23919/LTB-3D.2019.8735247
DO - 10.23919/LTB-3D.2019.8735247
M3 - Conference contribution
AN - SCOPUS:85068355112
T3 - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
BT - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
Y2 - 21 May 2019 through 25 May 2019
ER -