Degradation-free Cu/HSQ damascene technology using metal mask patterning and post-CMP cleaning by electrolytic ionized water

H. Aoki; S. Yamasaki; T. Usami; Y. Tsuchiya; N. Ito; T. Onodera; Y. Hayashi; K. Ueno; H. Gomi; N. Aoto

Degradation-free Cu/HSQ damascene technology using metal mask patterning and post-CMP cleaning by electrolytic ionized water

H. Aoki, S. Yamasaki, T. Usami, Y. Tsuchiya, N. Ito, T. Onodera, Y. Hayashi, K. Ueno, H. Gomi, N. Aoto

研究成果: Conference article › 査読

抄録

A Cu/HSQ damascene structure can be achieved by a new HSQ patterning technology using a TiN mask and post-CMP cleaning with electrolytic ionized ultra-pure cathode water. A Cu/HSQ structure with capacitance 17% lower than that of HSQ patterned by a conventional photo-resist-mask process was successfully fabricated with a sufficiently small number of post-Cu-CMP particles, only 30% of that with conventional post-Cu-CMP cleaning.

本文言語	English
ページ（範囲）	777-780
ページ数	4
ジャーナル	Technical Digest - International Electron Devices Meeting, IEDM
出版ステータス	Published - 1997 12月 1
イベント	1997 International Electron Devices Meeting - Washington, DC, USA 継続期間: 1997 12月 7 → 1997 12月 10

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学
材料化学

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引用スタイル

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abstract = "A Cu/HSQ damascene structure can be achieved by a new HSQ patterning technology using a TiN mask and post-CMP cleaning with electrolytic ionized ultra-pure cathode water. A Cu/HSQ structure with capacitance 17% lower than that of HSQ patterned by a conventional photo-resist-mask process was successfully fabricated with a sufficiently small number of post-Cu-CMP particles, only 30% of that with conventional post-Cu-CMP cleaning.",

author = "H. Aoki and S. Yamasaki and T. Usami and Y. Tsuchiya and N. Ito and T. Onodera and Y. Hayashi and K. Ueno and H. Gomi and N. Aoto",

year = "1997",

month = dec,

day = "1",

language = "English",

pages = "777--780",

journal = "Technical Digest - International Electron Devices Meeting",

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note = "1997 International Electron Devices Meeting ; Conference date: 07-12-1997 Through 10-12-1997",

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T1 - Degradation-free Cu/HSQ damascene technology using metal mask patterning and post-CMP cleaning by electrolytic ionized water

AU - Aoki, H.

AU - Yamasaki, S.

AU - Usami, T.

AU - Tsuchiya, Y.

AU - Ito, N.

AU - Onodera, T.

AU - Hayashi, Y.

AU - Ueno, K.

AU - Gomi, H.

AU - Aoto, N.

PY - 1997/12/1

Y1 - 1997/12/1

N2 - A Cu/HSQ damascene structure can be achieved by a new HSQ patterning technology using a TiN mask and post-CMP cleaning with electrolytic ionized ultra-pure cathode water. A Cu/HSQ structure with capacitance 17% lower than that of HSQ patterned by a conventional photo-resist-mask process was successfully fabricated with a sufficiently small number of post-Cu-CMP particles, only 30% of that with conventional post-Cu-CMP cleaning.

AB - A Cu/HSQ damascene structure can be achieved by a new HSQ patterning technology using a TiN mask and post-CMP cleaning with electrolytic ionized ultra-pure cathode water. A Cu/HSQ structure with capacitance 17% lower than that of HSQ patterned by a conventional photo-resist-mask process was successfully fabricated with a sufficiently small number of post-Cu-CMP particles, only 30% of that with conventional post-Cu-CMP cleaning.

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M3 - Conference article

AN - SCOPUS:84886448085

SN - 0163-1918

SP - 777

EP - 780

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1997 International Electron Devices Meeting

Y2 - 7 December 1997 through 10 December 1997

ER -