抄録
Structural, electrical, and optical properties of an InGaN-based light-emitting diode (LED) on an AlN/sapphire template have been studied and compared with the conventional LED properties on a sapphire substrate. In comparison to the LED on sapphire, the LED on AlN/sapphire template has shown better electrical and optical characteristics, which are due to a low threading dislocation density, high resistive, and thermal conductive AlN layer. An additional advantage is to grow a high-quality LED structure on an AlN/sapphire template without using low-temperature-grown GaN or an AlN buffer layer.
本文言語 | English |
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ページ(範囲) | 292-294 |
ページ数 | 3 |
ジャーナル | Applied Physics Letters |
巻 | 81 |
号 | 2 |
DOI | |
出版ステータス | Published - 2002 7月 8 |
外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学(その他)