Device structure- and trap parameter-dependence of current collapse and lag phenomena in AlGaN/GaN HEMTs

A. Nakajima, K. Itagaki, H. Nara, K. Horio

研究成果: Article › 査読

本文言語	English
ページ（範囲）	518-519
ジャーナル	Extended abstracts of 2008 International Conference on Solid State Devices and Materials (SSDM 2008), Tsukuba, Japan
出版ステータス	Published - 2008 9月 25

引用スタイル

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title = "Device structure- and trap parameter-dependence of current collapse and lag phenomena in AlGaN/GaN HEMTs",

author = "A. Nakajima and K. Itagaki and H. Nara and K. Horio",

year = "2008",

month = sep,

day = "25",

language = "English",

pages = "518--519",

journal = "Extended abstracts of 2008 International Conference on Solid State Devices and Materials (SSDM 2008), Tsukuba, Japan",

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TY - JOUR

T1 - Device structure- and trap parameter-dependence of current collapse and lag phenomena in AlGaN/GaN HEMTs

AU - Nakajima, A.

AU - Itagaki, K.

AU - Nara, H.

AU - Horio, K.

PY - 2008/9/25

Y1 - 2008/9/25

M3 - Article

SP - 518

EP - 519

JO - Extended abstracts of 2008 International Conference on Solid State Devices and Materials (SSDM 2008), Tsukuba, Japan

JF - Extended abstracts of 2008 International Conference on Solid State Devices and Materials (SSDM 2008), Tsukuba, Japan

ER -