Dielectric and electrical properties of amorphous La1-xTa xOy films as higher- k gate insulators

Yi Zhao; Koji Kita; Kentaro Kyuno; Akira Toriumi

doi:10.1063/1.3073946

Dielectric and electrical properties of amorphous La_1-xTa _xO_y films as higher- k gate insulators

Yi Zhao, Koji Kita, Kentaro Kyuno, Akira Toriumi

研究成果: Article › 査読

20 被引用数 (Scopus)

抄録

In this study, we investigated the applicability of an amorphous, high-permittivity (k) dielectric film La_1-xTa_xO _y as an alternative gate insulator in next-generation complementary metal-oxide-semiconductor devices and metal-insulator-metal capacitors. La _1-xTa_xO_y films not only show a crystallization temperature higher than 1000 °C, but also a permittivity as high as 30. La_1-xTa_xO_y films also have a much larger band gap than Ta₂O₅ films because of the coupling effect between the 5d orbitals of La and Ta atoms bonding to a common oxygen atom. Therefore, La_1-xTa_xO_y films with appropriate Ta concentration are promising amorphous high- k gate insulators.

本文言語	English
論文番号	034103
ジャーナル	Journal of Applied Physics
巻	105
号	3
DOI	https://doi.org/10.1063/1.3073946
出版ステータス	Published - 2009

ASJC Scopus subject areas

物理学および天文学（全般）

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10.1063/1.3073946

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@article{16ff9b48e98046e8a81a1f3cafc5b640,

title = "Dielectric and electrical properties of amorphous La1-xTa xOy films as higher- k gate insulators",

abstract = "In this study, we investigated the applicability of an amorphous, high-permittivity (k) dielectric film La1-xTaxO y as an alternative gate insulator in next-generation complementary metal-oxide-semiconductor devices and metal-insulator-metal capacitors. La 1-xTaxOy films not only show a crystallization temperature higher than 1000 °C, but also a permittivity as high as 30. La1-xTaxOy films also have a much larger band gap than Ta2O5 films because of the coupling effect between the 5d orbitals of La and Ta atoms bonding to a common oxygen atom. Therefore, La1-xTaxOy films with appropriate Ta concentration are promising amorphous high- k gate insulators.",

author = "Yi Zhao and Koji Kita and Kentaro Kyuno and Akira Toriumi",

note = "Funding Information: This work was partly supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan and by the NEDO/MIRAI project.",

year = "2009",

doi = "10.1063/1.3073946",

language = "English",

volume = "105",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "3",

}

TY - JOUR

T1 - Dielectric and electrical properties of amorphous La1-xTa xOy films as higher- k gate insulators

AU - Zhao, Yi

AU - Kita, Koji

AU - Kyuno, Kentaro

AU - Toriumi, Akira

N1 - Funding Information: This work was partly supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan and by the NEDO/MIRAI project.

PY - 2009

Y1 - 2009

N2 - In this study, we investigated the applicability of an amorphous, high-permittivity (k) dielectric film La1-xTaxO y as an alternative gate insulator in next-generation complementary metal-oxide-semiconductor devices and metal-insulator-metal capacitors. La 1-xTaxOy films not only show a crystallization temperature higher than 1000 °C, but also a permittivity as high as 30. La1-xTaxOy films also have a much larger band gap than Ta2O5 films because of the coupling effect between the 5d orbitals of La and Ta atoms bonding to a common oxygen atom. Therefore, La1-xTaxOy films with appropriate Ta concentration are promising amorphous high- k gate insulators.

AB - In this study, we investigated the applicability of an amorphous, high-permittivity (k) dielectric film La1-xTaxO y as an alternative gate insulator in next-generation complementary metal-oxide-semiconductor devices and metal-insulator-metal capacitors. La 1-xTaxOy films not only show a crystallization temperature higher than 1000 °C, but also a permittivity as high as 30. La1-xTaxOy films also have a much larger band gap than Ta2O5 films because of the coupling effect between the 5d orbitals of La and Ta atoms bonding to a common oxygen atom. Therefore, La1-xTaxOy films with appropriate Ta concentration are promising amorphous high- k gate insulators.

UR - http://www.scopus.com/inward/record.url?scp=60449093604&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=60449093604&partnerID=8YFLogxK

U2 - 10.1063/1.3073946

DO - 10.1063/1.3073946

M3 - Article

AN - SCOPUS:60449093604

SN - 0021-8979

VL - 105

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

M1 - 034103

ER -