Dielectric Constant Increase of Yttrium-Doped HfO2 by Structural Phase Modification

K Kita, K Kyuno, A toriumi

研究成果: Article › 査読

本文言語	English
ページ（範囲）	794-795
ジャーナル	Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)
出版ステータス	Published - 2004 9月 1

引用スタイル

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title = "Dielectric Constant Increase of Yttrium-Doped HfO2 by Structural Phase Modification",

author = "K Kita and K Kyuno and A toriumi",

year = "2004",

month = sep,

day = "1",

language = "English",

pages = "794--795",

journal = "Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)",

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TY - JOUR

T1 - Dielectric Constant Increase of Yttrium-Doped HfO2 by Structural Phase Modification

AU - Kita, K

AU - Kyuno, K

AU - toriumi, A

PY - 2004/9/1

Y1 - 2004/9/1

M3 - Article

SP - 794

EP - 795

JO - Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)

JF - Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)

ER -