Difference between O2 and N2 Annealing Effects on CVD-SiO2 Film Quality Studied by Open-Circuit Measurement

K. Kita, K. Kyuno, A. Toriumi

研究成果: Article › 査読

本文言語	English
ページ（範囲）	786-787
ジャーナル	Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)
出版ステータス	Published - 2004 9月 1

引用スタイル

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title = "Difference between O2 and N2 Annealing Effects on CVD-SiO2 Film Quality Studied by Open-Circuit Measurement",

author = "K. Kita and K. Kyuno and A. Toriumi",

year = "2004",

month = sep,

day = "1",

language = "English",

pages = "786--787",

journal = "Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)",

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AU - Toriumi, A.

PY - 2004/9/1

Y1 - 2004/9/1

M3 - Article

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EP - 787

JO - Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)

JF - Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)

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