Different origins of Tc-suppression in YBa2(Cu1−xMx)3Oy(M=Co and Zn)

Shoji Terada; Norio Kobayashi; Hideo Iwasaki; Ayako Tokiwa; Masae Kikuchi; Yasuhiko Syono; Yoshio Muto

doi:10.1016/S0921-4526(09)80358-X

Different origins of T_c-suppression in YBa₂(Cu_1−xM_x)₃O_y(M=Co and Zn)

Shoji Terada, Norio Kobayashi, Hideo Iwasaki, Ayako Tokiwa, Masae Kikuchi, Yasuhiko Syono, Yoshio Muto

研究成果: Article › 査読

2 被引用数 (Scopus)

抄録

The electrical resistivity, the Hall effect and the oxygen content have been measured for YBa₂(Cu_1−xM_x)₃O_y(M=Co and Zn). The electrical resistivity increases with concentration x in both systems. The carrier concentration decreases with x for M=Co, while it remains almost constant for M=Zn. The suppression of T_c in the Co-doped system is explained by the reduction in carrier. In the Zn-doped system, on the other hand, the suppression seems to be caused by the electron localization in Cu-O planes.

本文言語	English
ページ（範囲）	1545-1546
ページ数	2
ジャーナル	Physica B: Condensed Matter
巻	165-166
DOI	https://doi.org/10.1016/S0921-4526(09)80358-X
出版ステータス	Published - 1990
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学

文献へのアクセス

10.1016/S0921-4526(09)80358-X

他のファイルとリンク

引用スタイル

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title = "Different origins of Tc-suppression in YBa2(Cu1−xMx)3Oy(M=Co and Zn)",

abstract = "The electrical resistivity, the Hall effect and the oxygen content have been measured for YBa2(Cu1−xMx)3Oy(M=Co and Zn). The electrical resistivity increases with concentration x in both systems. The carrier concentration decreases with x for M=Co, while it remains almost constant for M=Zn. The suppression of Tc in the Co-doped system is explained by the reduction in carrier. In the Zn-doped system, on the other hand, the suppression seems to be caused by the electron localization in Cu-O planes.",

author = "Shoji Terada and Norio Kobayashi and Hideo Iwasaki and Ayako Tokiwa and Masae Kikuchi and Yasuhiko Syono and Yoshio Muto",

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T1 - Different origins of Tc-suppression in YBa2(Cu1−xMx)3Oy(M=Co and Zn)

AU - Terada, Shoji

AU - Kobayashi, Norio

AU - Iwasaki, Hideo

AU - Tokiwa, Ayako

AU - Kikuchi, Masae

AU - Syono, Yasuhiko

AU - Muto, Yoshio

PY - 1990

Y1 - 1990

N2 - The electrical resistivity, the Hall effect and the oxygen content have been measured for YBa2(Cu1−xMx)3Oy(M=Co and Zn). The electrical resistivity increases with concentration x in both systems. The carrier concentration decreases with x for M=Co, while it remains almost constant for M=Zn. The suppression of Tc in the Co-doped system is explained by the reduction in carrier. In the Zn-doped system, on the other hand, the suppression seems to be caused by the electron localization in Cu-O planes.

AB - The electrical resistivity, the Hall effect and the oxygen content have been measured for YBa2(Cu1−xMx)3Oy(M=Co and Zn). The electrical resistivity increases with concentration x in both systems. The carrier concentration decreases with x for M=Co, while it remains almost constant for M=Zn. The suppression of Tc in the Co-doped system is explained by the reduction in carrier. In the Zn-doped system, on the other hand, the suppression seems to be caused by the electron localization in Cu-O planes.

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