EBIC observation of n-GaN grown on sapphire substrates by MOCVD

Engineering & Materials Science

• Metallorganic chemical vapor deposition 79%
• Sapphire 67%
• Induced currents 64%
• Electron beams 60%
• Molten materials 49%
• Substrates 35%
• Etching 18%
• Electric potential 8%

Chemical Compounds

• Electron Beam Induced Current 100%
• Chemical Vapour Deposition 45%
• Etching 15%
• Voltage 12%

Physics & Astronomy

• metalorganic chemical vapor deposition 48%
• sapphire 43%
• electron beams 36%
• minority carriers 17%
• etching 12%
• electric potential 9%