Effect of gold layer thickness on the low-temperature crystallization process of germanium thin films by gold-induced crystallization

Narin Sunthornpan; Kohtaroh Tauchi; Nairu Tezuka; Kentaro Kyuno

doi:10.35848/1347-4065/aba63d

Effect of gold layer thickness on the low-temperature crystallization process of germanium thin films by gold-induced crystallization

Narin Sunthornpan, Kohtaroh Tauchi, Nairu Tezuka, Kentaro Kyuno

研究成果: Article › 査読

4 被引用数 (Scopus)

抄録

The effect of Au layer thickness (1, 2.5, 5, 7.5 and 10 nm) on the low-temperature crystallization of Ge thin films (30 nm) was examined. It is found that the best Ge crystallinity is achieved at an Au layer thickness of 2.5 nm. This finding will open up the possibility to reduce the amount of Au consumption in the low-temperature crystallization process of Ge thin films.

本文言語	English
論文番号	080904
ジャーナル	Japanese Journal of Applied Physics
巻	59
号	8
DOI	https://doi.org/10.35848/1347-4065/aba63d
出版ステータス	Published - 2020 8月 1

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

文献へのアクセス

10.35848/1347-4065/aba63d

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引用スタイル

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