Effect of residual OH impurities in ALD high-k films on interfacial SiO2 growth

S.Kimura S.Kimura, K.Iwamoto K.Iwamoto, M.Kadoshima M.Kadoshima, Y.Nunoshige Y.Nunoshige, A.Ogawa A.Ogawa, T.Nabatame T.Nabatame, H.Ohta H.Ohta, A.Toriumi A.Toriumi, T.Ohishi T.Ohishi, Tomoji Oishi

研究成果: Article査読

ジャーナル2006 International Workshop on Dielectric Thin Films for Future ULSI Devices-Science and Technology
出版ステータスPublished - 2006 11月 8