Effect of residual OH impurities in ALD high-k films on interfacial SiO2 growth

S.Kimura S.Kimura; K.Iwamoto K.Iwamoto; M.Kadoshima M.Kadoshima; Y.Nunoshige Y.Nunoshige; A.Ogawa A.Ogawa; T.Nabatame T.Nabatame; H.Ohta H.Ohta; A.Toriumi A.Toriumi; T.Ohishi T.Ohishi; Tomoji Oishi

Effect of residual OH impurities in ALD high-k films on interfacial SiO2 growth

S.Kimura S.Kimura, K.Iwamoto K.Iwamoto, M.Kadoshima M.Kadoshima, Y.Nunoshige Y.Nunoshige, A.Ogawa A.Ogawa, T.Nabatame T.Nabatame, H.Ohta H.Ohta, A.Toriumi A.Toriumi, T.Ohishi T.Ohishi, Tomoji Oishi

地域環境システム専攻

研究成果: Article › 査読

本文言語	English
ジャーナル	2006 International Workshop on Dielectric Thin Films for Future ULSI Devices-Science and Technology
出版ステータス	Published - 2006 11月 8

引用スタイル

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title = "Effect of residual OH impurities in ALD high-k films on interfacial SiO2 growth",

author = "S.Kimura S.Kimura and K.Iwamoto K.Iwamoto and M.Kadoshima M.Kadoshima and Y.Nunoshige Y.Nunoshige and A.Ogawa A.Ogawa and T.Nabatame T.Nabatame and H.Ohta H.Ohta and A.Toriumi A.Toriumi and T.Ohishi T.Ohishi and Tomoji Oishi",

year = "2006",

month = nov,

day = "8",

language = "English",

journal = "2006 International Workshop on Dielectric Thin Films for Future ULSI Devices-Science and Technology",

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TY - JOUR

T1 - Effect of residual OH impurities in ALD high-k films on interfacial SiO2 growth

AU - S.Kimura, S.Kimura

AU - K.Iwamoto, K.Iwamoto

AU - M.Kadoshima, M.Kadoshima

AU - Y.Nunoshige, Y.Nunoshige

AU - A.Ogawa, A.Ogawa

AU - T.Nabatame, T.Nabatame

AU - H.Ohta, H.Ohta

AU - A.Toriumi, A.Toriumi

AU - T.Ohishi, T.Ohishi

AU - Oishi, Tomoji

PY - 2006/11/8

Y1 - 2006/11/8

M3 - Article

JO - 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices-Science and Technology

JF - 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices-Science and Technology

ER -