TY - JOUR
T1 - Effects of glass components on crystallization and dielectric properties of BST glass-ceramics
AU - Isaka, Nobuyuki
AU - Ohkawa, Kensuke
AU - Kiyono, Hajime
AU - Itoh, Hidenobu
AU - Takahashi, Junichi
PY - 2008
Y1 - 2008
N2 - Crystallization behavior was studied for glass powders in which some portions of AlF 3 in the net composition of 60(Ba 0.7 Sr 0.3)TiO 3-25SiO 2-15AlF 3 were replaced with Ga 2O 3 or Bi 2 O 3. The replacement with Ga 2O 3 resulted in a progressive increase in crystallization temperature, which effectively assisted the viscous sintering of glass powders to produce densified BST glass-ceramics at relatively lower temperatures. For the Bi 2O 3-replaced glass powders, an increasing amount of Bi 2O 3 replacement lowered the crystallization temperature and yielded less densified glass-ceramics containing a considerable amount of glassy phase. The temperature dependence of permittivity was estimated for the Ga 2O 3- and Bi 2O 3-replaced glass-ceramics as a function of sintering conditions and the amount of replacement, respectively.
AB - Crystallization behavior was studied for glass powders in which some portions of AlF 3 in the net composition of 60(Ba 0.7 Sr 0.3)TiO 3-25SiO 2-15AlF 3 were replaced with Ga 2O 3 or Bi 2 O 3. The replacement with Ga 2O 3 resulted in a progressive increase in crystallization temperature, which effectively assisted the viscous sintering of glass powders to produce densified BST glass-ceramics at relatively lower temperatures. For the Bi 2O 3-replaced glass powders, an increasing amount of Bi 2O 3 replacement lowered the crystallization temperature and yielded less densified glass-ceramics containing a considerable amount of glassy phase. The temperature dependence of permittivity was estimated for the Ga 2O 3- and Bi 2O 3-replaced glass-ceramics as a function of sintering conditions and the amount of replacement, respectively.
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U2 - 10.1007/s10854-008-9566-8
DO - 10.1007/s10854-008-9566-8
M3 - Article
AN - SCOPUS:53749103122
SN - 0957-4522
VL - 19
SP - 1233
EP - 1239
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 12
ER -